TQM300NB06DCR RLG

$1.06

Description：MOSFET 2N-CH 60V 6A 8PDFNU
Series：-

SKU:f4d15dd35342 Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 6A 8PDFNU
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1020pF @ 30V
Power - Max：2.5W (Ta), 48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：8-PowerTDFN
Supplier Device Package：8-PDFNU (5x6)
Grade：Automotive
Qualification：AEC-Q101

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TQM300NB06DCR RLG

Overview

The TQM300NB06DCR RLG is an automotive-grade dual N-channel MOSFET manufactured by Taiwan Semiconductor. It features a PDFN56U Dual package with wettable flanks and supports a maximum junction temperature of 175°C. The device provides a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 25A at case temperature (TC=25°C). Key electrical parameters include a maximum on-resistance (RDS(on)) of 30mΩ at VGS=10V, a gate charge (Qg) of 20nC, and a forward transconductance of 26S. It is qualified to AEC-Q101 standards.

Feature Summary

Dual N-Channel Configuration
Wettable Flank Package Design
Automotive Grade Qualification

Applications

12V Automotive Systems
Solenoid and Motor Control
Automotive Transmission Control
DC-DC Converters

Procurement Notes

Verify the component against the official datasheet version A2006 to ensure accuracy. Confirm that the PDFN56U Dual package includes wettable flank technology for enhanced solder joint reliability. Ensure the selected variant meets AEC-Q101 qualification requirements for automotive deployment. Validate thermal resistance specifications against the specific board layout design constraints.

Selection Notes

Select this component when designing circuits requiring dual N-channel switching in a compact surface-mount footprint. Consider the 175°C operating junction temperature capability for high-thermal environments. Evaluate the 30mΩ on-resistance at VGS=10V for low conduction losses. Verify compatibility with the 60V drain-source voltage rating for the target system bus voltage.

Part Context

This part belongs to the TQM series of automotive MOSFETs from Taiwan Semiconductor. It utilizes the PDFN56U Dual package, which is designed for improved thermal performance and soldering reliability compared to standard packages. The series is specifically engineered for robust operation in demanding automotive electronic applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference tools or authorized distributors for parametrically equivalent alternatives if necessary.