TSM025NH04LCR RLG

$2.07

Description：40V, 100A, SINGLE N-CHANNEL POWE
Series：PerFET™
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:aae7059a770d Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

TSM025NH04LCR RLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 40V, 100A, SINGLE N-CHANNEL POWE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM025NH04LCR RLG

Description：40V, 100A, SINGLE N-CHANNEL POWE
Series：PerFET™
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：26A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63.3 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：4179 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：8-PDFNU (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for TSM025NH04LCR RLG

TSM025NH04LCR RLG

Single FETs, MOSFETs Overview

The TSM025NH04LCR RLG is a single N-channel enhancement mode power MOSFET manufactured by Taiwan Semiconductor. It utilizes advanced Trench technology to achieve an ultra-low on-resistance of 2.5 mΩ maximum at VGS = 10V and ID = 50A, or 3.5 mΩ at VGS = 4.5V. The device features a 40V drain-source voltage rating and supports continuous drain currents up to 100A at TC = 100°C or 26A at TA = 25°C. Packaged in a PDFN56U (8-PDFNU) surface-mount format with wettable flank leads, it offers high thermal efficiency with a junction-to-case thermal resistance of 1.1 °C/W and operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Ultra-low on-resistance achieved through advanced Trench technology for improved power efficiency
Wettable flank lead design facilitates enhanced automated optical inspection reliability
Validated for 100% unclamped inductive switching (UIS) and gate resistance testing

Single FETs, MOSFETs Applications

DC-DC converters
Solenoid drivers
Motor drivers
Load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance and Halogen-Free standards as defined by IEC 61249-2-21. Ensure the selected variant matches the required moisture sensitivity level and reel specifications for your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and robust avalanche energy handling. The 40V rating and low gate charge make it suitable for efficient switching in compact designs. Consider the thermal resistance characteristics when designing heat dissipation paths for high-current scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the PerFET™ family of power transistors from Taiwan Semiconductor. It is designed for high-efficiency power management solutions where small form factors and high current capabilities are critical. The PDFN56U package provides a balance between thermal performance and board space optimization.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions before implementation.