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TSM045NA03CR RLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CH 30V 108A 8PDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TSM045NA03CR RLG
- Description：MOSFET N-CH 30V 108A 8PDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1194 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：89W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PDFN (5x6)
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for TSM045NA03CR RLG
Single FETs, MOSFETs Overview
The TSM045NA03CR RLG is an N-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The device is housed in a compact 8-PDFN (5x6) surface-mount package, suitable for high-density PCB layouts. Key electrical characteristics include a drain-source voltage of 30V and a continuous drain current rating of up to 205A at case temperature. The component operates within a junction temperature range of -55°C to 150°C, ensuring reliability in demanding power management applications.
Single FETs, MOSFETs Feature Summary
- Advanced high cell density trench technology for optimized performance
- Low gate charge facilitating efficient drive requirements
- Surface mount construction for automated assembly integration
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Load switch implementations
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'RLG' against the manufacturer's official datasheet to confirm packaging and tape-and-reel specifications. Ensure the part number matches the exact pinout and thermal characteristics required for your design. Cross-reference with the latest Taiwan Semiconductor documentation to confirm availability status and any recent product change notices affecting this specific variant.
Single FETs, MOSFETs Selection Notes
Select this component when a 30V N-channel MOSFET with high current capability is required in a small footprint. Consider the 8-PDFN package size for space-constrained designs. Evaluate the thermal resistance and power dissipation limits relative to your system's cooling capabilities. Compare gate charge and threshold voltage parameters against your driver circuit constraints to ensure optimal switching efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the TSM045 series of N-channel MOSFETs from Taiwan Semiconductor. These devices are designed for general-purpose power switching applications requiring low on-resistance and robust performance. The series typically offers various voltage and current ratings packaged in standard surface-mount formats to support diverse electronic equipment needs.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's official substitution guide or equivalent parameter tables for verified alternatives. Ensure any substitute matches the 30V Vdss, N-channel polarity, and 8-PDFN package dimensions. Verify that the replacement device meets or exceeds the original's Id, Rds(on), and thermal specifications.
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