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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 14A 8PDFNU
- Series：PerFET™
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 34A (Tc)
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1217pF @ 25V
- Power - Max：55.6W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFNU (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM076NH04DCR RLG is a dual N-channel Power MOSFET from Taiwan Semiconductor, housed in an 8-PDFNU (5x6) surface-mount package. It features ultra-low on-resistance and wettable flank leads for enhanced automated optical inspection. The device supports a drain-source voltage of 40V and operates at junction temperatures up to 175°C. Key electrical parameters include a maximum RDS(on) of 7.6mΩ at VGS=10V and 9.1mΩ at VGS=7V. Total gate charge is 19nC at VGS=10V, with an input capacitance of 1217pF. Thermal resistance from junction to case is 2.7°C/W.
Feature Summary
- Wettable flank lead design facilitates enhanced Automated Optical Inspection (AOI) reliability.
- Dual N-channel configuration provides compact integration for power switching applications.
- High thermal performance allows operation at junction temperatures up to 175°C.
Applications
- DC-DC Converters
- Solenoid and Motor Drivers
- Load Switch
Procurement Notes
Verify the specific ordering code against official datasheets to ensure correct packaging and reel specifications. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by IEC 61249-2-21 standards before finalizing procurement plans.
Selection Notes
Select this component for designs requiring low conduction losses and high thermal stability. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Verify board layout compatibility with the PDFN56U Dual package dimensions and pad layout recommendations.
Part Context
This part belongs to the PerFET™ series of power transistors manufactured by Taiwan Semiconductor Corporation. It is designed for general-purpose power switching applications where efficiency and thermal management are critical factors in system design.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching pinout, voltage ratings, and thermal characteristics if substitution is required.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does the package support Automated Optical Inspection?
Yes, the package features wettable flank leads specifically designed to enhance AOI capabilities.
What is the typical total gate charge?
The typical total gate charge is 13.6nC at VGS=7V and 19nC at VGS=10V.
