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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 14A 8PDFNU
- Series：PerFET™
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 34A (Tc)
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1344pF @ 25V
- Power - Max：55.6W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFNU (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM076NH04LDCR RLG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It utilizes the PDFN56U Dual package and features ultra-low on-resistance with wettable flank leads for enhanced automated optical inspection. The device supports a drain-source voltage of 40V, a continuous drain current of 34A at 100°C case temperature, and an operating junction temperature up to 175°C. Key electrical parameters include a maximum RDS(on) of 7.6mΩ at VGS=10V and 10.6mΩ at VGS=4.5V, with a total gate charge of 10.7nC at VGS=4.5V.
Feature Summary
- Dual N-channel configuration in a compact surface-mount package
- Ultra-low on-resistance for high efficiency
- Wettable flank leads designed to enhance automated optical inspection reliability
- Validated for 100% unclamped inductive switching (UIS) and gate resistance testing
Applications
- DC-DC converters
- Solenoid drivers
- Motor drivers
- Load switches
Procurement Notes
Verify the specific ordering code suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance and halogen-free requirements according to IEC 61249-2-21 standards before finalizing procurement specifications.
Selection Notes
Select this component when a dual N-channel topology is required within a small footprint. Ensure the application operates within the 40V drain-source voltage limit and accounts for thermal dissipation constraints defined by the junction-to-case thermal resistance.
Part Context
This part belongs to the TSM076NH04LDCR series from Taiwan Semiconductor. It is specifically engineered for applications requiring robust performance in power management circuits, leveraging advanced packaging technology to support high-density board layouts.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume cross-compatibility with other 40V dual MOSFETs without verifying pinout, thermal characteristics, and electrical limits.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does the package support automated optical inspection?
Yes, the PDFN56U Dual package features wettable flank leads specifically designed to enhance automated optical inspection (AOI).
Is the device tested for unclamped inductive switching?
Yes, the datasheet confirms that 100% of units are tested for unclamped inductive switching (UIS) capability.
