TSM080N03EPQ56 RLG

$0.23

Description：MOSFET N-CH 30V 55A 8PDFN
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:60b78f1cd5ba Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

TSM080N03EPQ56 RLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CH 30V 55A 8PDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM080N03EPQ56 RLG

Description：MOSFET N-CH 30V 55A 8PDFN
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.5 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：54W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PDFN (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for TSM080N03EPQ56 RLG

TSM080N03EPQ56 RLG

Single FETs, MOSFETs Overview

The TSM080N03EPQ56 RLG is an N-Channel Power MOSFET from Taiwan Semiconductor Corporation, housed in a PDFN56 package. It features a Drain-Source Voltage (VDS) of 30 V and a continuous drain current (ID) of 55 A at 25°C case temperature. The maximum on-state resistance (RDS(on)) is 8 mΩ at VGS = 10V and 12.5 mΩ at VGS = 4.5V. Total gate charge (Qg) is 7.5 nC. The device supports a single pulsed avalanche energy (EAS) of 45 mJ and operates within a junction temperature range of -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

Embedded Gate-Source ESD protection diode for enhanced reliability
Guaranteed 100% Avalanche Energy (EAS) testing
Fast switching capability optimized for power efficiency
Halogen-free green device compliant with environmental directives

Single FETs, MOSFETs Applications

Vcore / Motherboard power delivery
Point-of-Load (POL) applications
Synchronous Rectification in Switch Mode Power Supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'RLG' against official Taiwan Semiconductor documentation to confirm packaging details, such as reel size and quantity per reel. Ensure compliance requirements match project specifications, including RoHS and halogen-free standards. Cross-reference datasheet version B15 for accurate thermal and electrical parameters before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current synchronous rectification where fast switching and low conduction losses are critical. The PDFN56 package offers compact surface-mount integration suitable for dense PCB layouts. Evaluate thermal management requirements based on the specified junction-to-ambient resistance when designing heat dissipation strategies for continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the TSM080N03E series of N-Channel Power MOSFETs manufactured by Taiwan Semiconductor. The series utilizes OptiMOS technology to achieve low on-resistance and fast switching speeds. The PDFN56 package provides a robust solution for modern power electronics, balancing thermal performance with space-constrained design requirements.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet specifications.