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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10A 8PDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 48A (Tc)
- Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1506pF @ 20V
- Power - Max：2W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 155°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFN (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM110NB04DCR RLG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a PDFN56 Dual package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 10A at ambient temperature and 48A at case temperature, with a maximum on-resistance of 11mΩ at VGS=10V. Key electrical parameters include a gate charge of 25nC, a threshold voltage range of 2V to 4V, and a total power dissipation of 2W at TA=25°C. The component is rated for an operating junction temperature between -55°C and +150°C.
Feature Summary
- Low on-resistance minimizes conductive losses
- Low gate charge enables fast power switching
- 100% tested for Unclamped Inductive Switching (UIS) and Gate Resistance
Applications
- BLDC Motor Control
- Battery Power Management
- DC-DC Converter
- Secondary Synchronous Rectification
Procurement Notes
Verify the specific ordering code TSM110NB04DCR RLG against official datasheets to confirm the PDFN56 Dual package configuration. Ensure that application requirements align with the absolute maximum ratings, particularly the 40V drain-source voltage and thermal limits. Confirm compliance with RoHS standards and halogen-free specifications as defined in IEC 61249-2-21 before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring low conduction losses and rapid switching speeds within a 40V system. Evaluate the thermal resistance values, specifically the junction-to-case resistance of 2.6°C/W, to ensure adequate heat dissipation. Consider the gate charge characteristics when designing drive circuits to optimize switching performance and minimize driver power consumption.
Part Context
This part belongs to the TSM110 series of dual N-channel MOSFETs from Taiwan Semiconductor. It utilizes the PDFN56 Dual package, which provides a compact surface-mount solution suitable for high-density PCB layouts. The device is designed to offer improved thermal performance and electrical efficiency compared to standard single-channel alternatives in similar voltage classes.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps with potential alternatives before implementation.
