TSM150NB04DCR RLG

$0.90

Description：MOSFET 2N-CH 40V 8A 8PDFN
Series：-

SKU:75874c3a42cb Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 8A 8PDFN
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：8A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1132pF @ 20V
Power - Max：2W (Ta), 40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-PDFN (5x6)
Grade：-
Qualification：-

Download product information

TSM150NB04DCR RLG

Overview

The TSM150NB04DCR RLG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a PDFN56 Dual package with a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 38A at 25°C case temperature. The device achieves a maximum on-resistance (RDS(on)) of 15mΩ at VGS=10V and ID=8A, or 28.6mΩ at VGS=7V and ID=6A. Key electrical parameters include a total gate charge (Qg) of 18nC at VGS=10V, an input capacitance (Ciss) of 1132pF, and a junction-to-case thermal resistance (RθJC) of 3.1°C/W. The component supports an operating junction temperature range from -55°C to +150°C.

Feature Summary

Dual N-Channel configuration for space-efficient circuit designs
Low on-resistance to minimize conductive losses
Optimized gate charge characteristics for fast switching performance
Validated through 100% Unclamped Inductive Switching (UIS) and gate resistance testing

Applications

BLDC Motor Control
Battery Power Management
DC-DC Converter
Secondary Synchronous Rectification

Procurement Notes

Verify the specific ordering code TSM150NB04DCR RLG against official Taiwan Semiconductor documentation to confirm the PDFN56 Dual package and reel quantity specifications. Ensure that environmental compliance requirements match the datasheet declarations regarding RoHS standards and halogen-free status according to IEC 61249-2-21 before finalizing procurement orders.

Selection Notes

Select this component when a compact dual N-channel solution is required for 40V applications. The low RDS(on) and optimized gate charge make it suitable for high-efficiency synchronous rectification and motor control circuits. Verify that the PCB layout accommodates the PDFN56 Dual footprint and provides adequate copper area to manage the specified thermal resistance values effectively.

Part Context

This part belongs to the TSM150 series of dual N-channel MOSFETs from Taiwan Semiconductor. It utilizes the PDFN56 Dual package, which integrates two independent N-channel devices in a single surface-mount form factor. This configuration allows designers to reduce board space compared to using discrete single-channel components while maintaining high current handling capabilities.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult the manufacturer's official documentation or authorized distributor databases to identify compatible alternatives based on matching electrical parameters and package dimensions.