Single FETs, MOSFETs TSM1NB60SCT B0G product image

TSM1NB60SCT B0G

  • Description:MOSFET N-CH 600V 500MA TO92
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Bulk

SKU:4a1023a29e50 Category: Brand:

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TSM1NB60SCT B0G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CH 600V 500MA TO92. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM1NB60SCT B0G

  • Description:MOSFET N-CH 600V 500MA TO92
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:500mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:10Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:138 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)

Single FETs, MOSFETs datasheet and documents for TSM1NB60SCT B0G

TSM1NB60SCT B0G

Single FETs, MOSFETs Overview

The TSM1NB60SCT B0G is an N-Channel Power MOSFET manufactured by Taiwan Semiconductor. It features a TO-92 package and supports a Drain-Source Voltage (VDS) of 600 V with a maximum Drain-Source On-State Resistance (RDS(on)) of 10 Ω at VGS = 10V and ID = 0.25A. The device has a continuous drain current rating of 0.5 A at 25°C, a total gate charge (Qg) of 6.1 nC, and a single pulse avalanche energy capability of 5 mJ. Operating junction temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC standards
  • Halogen-free construction according to IEC 61249-2-21
  • Pb-free plating finish
  • 100% avalanche tested for reliability

Single FETs, MOSFETs Applications

  • Power Supply circuits
  • AC/DC LED Lighting systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'B0G' corresponds to the required bulk packaging quantity of 1,000 pieces per tube. Confirm that the TO-92 through-hole package aligns with the target PCB footprint requirements. Ensure the component meets the necessary environmental compliance standards for the intended market.

Single FETs, MOSFETs Selection Notes

Select this component for low-current applications requiring high voltage blocking capabilities in a compact TO-92 form factor. Consider the 10 Ω on-resistance when evaluating conduction losses at the expected operating current levels. Verify thermal management strategies given the limited power dissipation capacity of the package.

Single FETs, MOSFETs Part Context

This part belongs to the TSM1NB60SCT series of N-Channel Power MOSFETs from Taiwan Semiconductor. The series offers various packaging options including Bulk and Ammo packing configurations. The device utilizes standard silicon technology optimized for general-purpose switching applications within its specified electrical limits.

Single FETs, MOSFETs Replacement Considerations

No officially confirmed substitute part numbers are documented in the provided datasheet.

TSM1NB60SCT B0GTSM1NB60SCT B0G

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