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TSM1NB60SCT B0G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CH 600V 500MA TO92. Review the specifications below when checking this part for your BOM.
The TSM1NB60SCT B0G is an N-Channel Power MOSFET manufactured by Taiwan Semiconductor. It features a TO-92 package and supports a Drain-Source Voltage (VDS) of 600 V with a maximum Drain-Source On-State Resistance (RDS(on)) of 10 Ω at VGS = 10V and ID = 0.25A. The device has a continuous drain current rating of 0.5 A at 25°C, a total gate charge (Qg) of 6.1 nC, and a single pulse avalanche energy capability of 5 mJ. Operating junction temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix 'B0G' corresponds to the required bulk packaging quantity of 1,000 pieces per tube. Confirm that the TO-92 through-hole package aligns with the target PCB footprint requirements. Ensure the component meets the necessary environmental compliance standards for the intended market.
Select this component for low-current applications requiring high voltage blocking capabilities in a compact TO-92 form factor. Consider the 10 Ω on-resistance when evaluating conduction losses at the expected operating current levels. Verify thermal management strategies given the limited power dissipation capacity of the package.
This part belongs to the TSM1NB60SCT series of N-Channel Power MOSFETs from Taiwan Semiconductor. The series offers various packaging options including Bulk and Ammo packing configurations. The device utilizes standard silicon technology optimized for general-purpose switching applications within its specified electrical limits.
No officially confirmed substitute part numbers are documented in the provided datasheet.
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