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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 5.8A 6TDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.8A (Tc)
- Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：775pF @ 10V
- Power - Max：620mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VDFN Exposed Pad
- Supplier Device Package：6-TDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The TSM250N02DCQ RFG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a 20V drain-source voltage and a low-profile TDFN 2x2 package. The device supports 1.8V drive applications with an on-resistance of 55mΩ at VGS=1.8V, 35mΩ at VGS=2.5V, and 25mΩ at VGS=4.5V. Continuous drain current reaches 5.8A at 25°C case temperature. Total gate charge is typically 7.7nC. Operating junction and storage temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-Channel configuration in a single low-profile package
- Optimized for 1.8V logic drive applications
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- Battery pack protection circuits
- Load switch implementations
Procurement Notes
Verify the component against the official datasheet version C2212 to confirm electrical parameters and marking codes. Ensure the ordering suffix matches the required packing quantity of 3,000 pieces per 7-inch reel. Confirm RoHS compliance and halogen-free status as specified in the manufacturer documentation before finalizing procurement orders.
Selection Notes
Select this component for applications requiring low-voltage switching with minimal footprint. Evaluate thermal resistance requirements based on the specific PCB layout, as junction-to-ambient resistance depends on user design. Verify that the driving circuit can provide sufficient gate voltage to achieve the desired on-resistance levels for optimal efficiency.
Part Context
This part belongs to the TSM250N02 series of dual N-channel MOSFETs. It utilizes the TDFN 2x2 package format designed for surface mount assembly. The product line emphasizes low profile dimensions and compatibility with automated processing equipment for high-volume manufacturing environments.
Replacement Considerations
Check for direct substitutes within the same family or similar packages. Verify pinout compatibility and ensure replacement parts meet the same voltage, current, and thermal specifications.
