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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 6A 8PDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta), 29A (Tc)
- Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1314pF @ 30V
- Power - Max：2W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFN (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM250NB06LDCR RLG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a PDFN56 Dual package with a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 29 A at case temperature of 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 25 mΩ at VGS = 10 V and 28 mΩ at VGS = 4.5 V. Total gate charge (Qg) is specified as 23 nC at VGS = 10 V and 12 nC at VGS = 4.5 V. The component supports an operating junction temperature range from -55°C to +150°C and includes an integrated body diode with a forward voltage of 1.2 V.
Feature Summary
- Dual N-Channel configuration for space-efficient designs
- Logic level gate drive capability for direct microcontroller interfacing
- Low on-resistance to minimize conductive losses
- Optimized gate charge for fast power switching applications
Applications
- BLDC Motor Control
- Battery Power Management
- DC-DC Converter
- Secondary Synchronous Rectification
Procurement Notes
Verify the specific ordering code TSM250NB06LDCR RLG against the manufacturer's official documentation to ensure correct packaging and revision status. Confirm that the PDFN56 Dual package dimensions align with the target PCB footprint. Check RoHS compliance and halogen-free status requirements against project specifications before finalizing procurement orders.
Selection Notes
Select this component when a compact dual MOSFET solution is required for 60 V systems. The low thermal resistance allows efficient heat dissipation in synchronous rectification or motor control topologies. Ensure the driving circuit can supply sufficient gate current to leverage the fast switching characteristics defined in the datasheet electrical specifications.
Part Context
This part belongs to the TSM250 series of power MOSFETs from Taiwan Semiconductor. It utilizes the PDFN56 Dual package, which integrates two independent N-channel devices in a single surface-mount footprint. This design reduces board space compared to using discrete single MOSFETs while maintaining high current handling capabilities suitable for modern power electronics.
Replacement Considerations
Direct replacements must match the 60 V rating, dual N-channel topology, and PDFN56 Dual package outline. Verify that substitute components meet or exceed the 29 A continuous drain current and 25 mΩ on-resistance specifications. Ensure thermal performance parameters are compatible with the existing heatsinking or copper pad layout.
