ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 6A 8PDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta), 29A (Tc)
- Rds On (Max) @ Id, Vgs：25mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1314pF @ 30V
- Power - Max：2W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFN (5x6)
- Grade：-
- Qualification：-
Download product information
Overview
The TSM250NB06LDCR is a single N-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It utilizes Trench technology to achieve low on-resistance and fast switching speeds. The device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 25A at 25°C case temperature. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±20V, a typical Rds(on) of 2.5mΩ at Vgs=10V, and a gate charge (Qg) of 38nC. It operates within a junction temperature range of -55°C to 175°C and is housed in an 8-PowerLDFN package.
Feature Summary
- Trench FET technology for optimized performance
- Low thermal resistance structure
- Lead-free finish and RoHS compliant
Applications
- DC-DC converters
- Power management circuits
- Load switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure the component meets AEC-Q101 requirements if automotive application is intended, as standard industrial versions may differ. Cross-reference the part number with authorized distributors to confirm authenticity and traceability.
Selection Notes
Select this component based on its 60V rating and 25A current capability for efficient power switching applications. Consider the low Rds(on) value for minimizing conduction losses in high-current paths. Evaluate the thermal performance within the 8-PowerLDFN package to ensure adequate heat dissipation for the target operating environment.
Part Context
This part belongs to the TSM series of N-channel MOSFETs from Taiwan Semiconductor. It is designed for general-purpose power switching applications requiring high efficiency and reliability. The series offers various voltage and current ratings to suit different power management needs.
Replacement Considerations
Check for direct replacements with identical pinouts and electrical specifications from other manufacturers such as Infineon or ON Semiconductor. Verify that any substitute matches the 60V/25A rating and 8-PowerLDFN package dimensions.
