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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 11.6A 6TDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：11.6A (Tc), 9A (Tc)
- Rds On (Max) @ Id, Vgs：30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.1nC @ 4.5V, 9.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：677pF @ 10V, 744pF @ 10V
- Power - Max：6.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VDFN Exposed Pad
- Supplier Device Package：6-TDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The TSM2537CQ RFG is a dual N- and P-channel power MOSFET in a TDFN2x2 package. It features a 20V drain-source voltage rating for both channels. The N-channel offers a maximum on-resistance of 30mΩ at VGS=4.5V, while the P-channel reaches 55mΩ at VGS=-4.5V. Continuous drain currents are 6.4A (N-ch) and -5A (P-ch) at 25°C ambient. Total gate charges are 7.3nC and 9.3nC respectively. The device supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Low on-state resistance to minimize conductive losses
- Low gate charge optimized for fast power switching
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- Load Switch
- Power Management
- Portable Devices
Procurement Notes
Verify the specific ordering suffix 'RFG' against official Taiwan Semiconductor documentation to confirm the 3,000-piece reel packing format. Ensure that the component meets RoHS compliance requirements for your target market. Cross-reference the datasheet version B2204 to validate all electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage applications. The TDFN2x2 package provides a small footprint suitable for space-constrained portable devices. Evaluate thermal performance based on the 66°C/W junction-to-ambient resistance and ensure adequate PCB copper area for heat dissipation during continuous operation.
Part Context
This part belongs to the TSM2537 series of dual N- and P-channel MOSFETs manufactured by Taiwan Semiconductor Corporation. The series is designed for efficient power management in modern electronic systems. The TDFN2x2 package allows for high-density surface mount assembly, supporting the miniaturization trends in consumer electronics and portable equipment design.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
FAQ
What is the maximum continuous drain current for the N-channel?
The maximum continuous drain current for the N-channel is 6.4A at an ambient temperature of 25°C.
Does the TSM2537CQ support halogen-free manufacturing?
Yes, the device is halogen-free according to IEC 61249-2-21 standards.
What is the typical total gate charge for the P-channel?
The typical total gate charge for the P-channel is 9.3nC under test conditions of VGS = -4.5V, VDS = -10V, and ID = -5A.
