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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 11.6A 6TDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：11.6A (Tc), 9A (Tc)
- Rds On (Max) @ Id, Vgs：30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.1nC @ 4.5V, 9.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：677pF @ 10V, 744pF @ 10V
- Power - Max：6.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VDFN Exposed Pad
- Supplier Device Package：6-TDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The TSM2537CQ is a complementary dual MOSFET array manufactured by Taiwan Semiconductor Corporation. It integrates an N-channel and a P-channel power MOSFET within a single surface-mount package. The device features a drain-source voltage rating of 20V for both channels. The N-channel supports a continuous drain current of 11.6A at case temperature, while the P-channel supports 9A. The total power dissipation capability is rated at 6.25W. The component utilizes a 6-TDFN (2x2) package suitable for automated assembly.
Feature Summary
- Complementary dual configuration integrating N-channel and P-channel MOSFETs in a single package
- Low voltage operation optimized for 20V drain-source applications
- Surface mount design utilizing compact 6-TDFN footprint
Applications
- DC-DC converter circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the specific ordering suffix when sourcing components. Datasheets often reference TSM2537CQ RFG, indicating reel packaging. Ensure the received part matches the required tape-and-reel specification if high-volume automation is intended. Confirm RoHS compliance status through official documentation before integration into regulated products.
Selection Notes
Select this component for designs requiring matched N/P-channel performance in space-constrained layouts. The 20V rating limits suitability to low-voltage logic interfaces and battery-powered systems. Evaluate thermal resistance requirements carefully as the small package size restricts heat dissipation compared to larger packages.
Part Context
This part belongs to the TSM2537 series of complementary MOSFET arrays. It serves as a monolithic solution replacing discrete N and P-channel transistors. The series targets applications needing synchronized switching characteristics between complementary devices. The TDFN package provides electrical isolation and thermal performance advantages over traditional plastic packages.
Replacement Considerations
Direct substitutes include other 20V complementary dual MOSFETs in 6-TDFN packages. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with manufacturer replacement guides for exact functional equivalents.
