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The TSM2538CQ is a dual N- and P-channel power MOSFET from Taiwan Semiconductor, housed in a compact TDFN 2x2 package. It features a 20V drain-source voltage rating with maximum on-resistance values of 40mΩ for the N-channel and 70mΩ for the P-channel at VGS = 4.5V. The device supports continuous drain currents of 10A (N-ch) and -8A (P-ch) at 25°C case temperature. Key dynamic parameters include gate charges of 7.5nC and 9.4nC, respectively. Designed for high efficiency, it operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering code TSM2538CQ RFG to confirm the TDFN 2x2 package configuration and standard 3,000-piece reel packing quantity. Ensure compliance with RoHS and halogen-free requirements as specified by IEC 61249-2-21. Confirm Moisture Sensitivity Level 3 classification per J-STD-020 before storage and assembly planning.
Select this component for designs requiring a compact dual MOSFET solution with a 20V voltage rating. Evaluate thermal resistance limits, specifically the 25°C/W junction-to-case value, against your board layout. Consider the gate charge values for driving requirements and ensure the operating temperature range meets the application's environmental demands.
This part belongs to Taiwan Semiconductor's portfolio of discrete power MOSFETs. It utilizes a TDFN 2x2 footprint to provide a space-efficient alternative to larger packages while maintaining robust electrical performance for modern portable and industrial electronics applications.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum continuous drain current for the N-channel is 10A when measured at a case temperature of 25°C.
Yes, the device supports an operating junction and storage temperature range from -55°C to +150°C.
The typical total gate charge for the P-channel is 9.4nC under conditions of VGS = -4.5V, VDS = -10V, and ID = -4.4A.