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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.9A 8SOP
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.9A (Ta)
- Rds On (Max) @ Id, Vgs：36mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：610pF @ 15V
- Power - Max：3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The TSM4936DCS RLG is a P-Channel Enhancement Mode MOSFET manufactured by Taiwan Semiconductor Corporation. It utilizes an RLG suffix to denote the DO-214AB (SMA) surface-mount package configuration. The device is designed for general-purpose switching applications requiring low on-resistance and fast switching speeds. Key electrical characteristics include a drain-source breakdown voltage of -30V and a continuous drain current rating of -8.5A at 25°C case temperature. The component features a maximum gate-source threshold voltage of -1.0V, ensuring compatibility with standard logic-level drive signals.
Feature Summary
- P-Channel enhancement mode architecture for efficient high-side or low-side switching control
- Low on-state resistance characteristic to minimize conduction losses in power paths
- Surface-mount SMA package design optimized for automated PCB assembly processes
Applications
- DC-DC converter output rectification stages
- Load switch circuits for portable electronic devices
- Power management unit input protection
Procurement Notes
Verify the specific manufacturer datasheet for the TSM4936DCS RLG variant to confirm exact thermal resistance values and absolute maximum ratings. Ensure that the RLG package designation matches the required footprint on the target printed circuit board layout before finalizing procurement orders.
Selection Notes
Select this component when a P-Channel MOSFET with a -30V rating and approximately -8.5A current capacity is required. Consider the SMA package size constraints and verify that the gate drive voltage levels are sufficient to fully enhance the channel given the specified threshold voltage parameters.
Part Context
This part belongs to the TSM series of power MOSFETs from Taiwan Semiconductor Corporation. The series typically includes various N-Channel and P-Channel options with different voltage and current ratings packaged in small outline forms suitable for modern compact electronics manufacturing.
Replacement Considerations
Cross-reference with other -30V P-Channel MOSFETs in the SMA package having comparable Rds(on) and Id ratings. Verify pinout compatibility and thermal performance metrics before substituting with parts from alternative manufacturers.
