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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 4.5A 8SOP
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：55mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：910pF @ 24V
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The TSM4946DCS RLG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation in an SOP-8 package. It utilizes advanced trench process technology to achieve ultra-low on-resistance, with a maximum drain-source resistance of 55 mΩ at VGS = 10V and ID = 4.5A. The device supports a continuous drain current of 4.5A (package limited) or 5.9A (silicon limited) at 25°C case temperature, with a breakdown voltage of 60V. Total gate charge is typically 19 nC. Thermal performance includes a junction-to-case resistance of 32 °C/W and a junction-to-ambient resistance of 62.5 °C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Advanced trench process technology for high-density cell design
- Ultra-low on-resistance characteristics
- RoHS compliant and halogen-free construction
Applications
- High-side DC/DC conversion
- Notebook computers
- Server systems
Procurement Notes
Verify the specific ordering code TSM4946DCS RLG against the manufacturer's official documentation to confirm the SOP-8 packaging and 2.5Kpcs per 13-inch reel packing configuration. Ensure compliance with RoHS standards and halogen-free requirements as specified in the datasheet. Confirm moisture sensitivity level classification per J-STD-020 before procurement.
Selection Notes
Select this component for applications requiring low conduction losses in 60V environments. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the gate drive voltage meets the requirements for optimal RDS(on) performance. Evaluate the package current limits versus silicon limits based on the specific operating conditions.
Part Context
This part belongs to the TSM4946 series of N-channel power MOSFETs. It is designed for general-purpose switching applications where efficiency and thermal performance are critical. The SOP-8 package provides a compact solution for surface-mount assembly.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is 4.5A when limited by the package at 25°C, or 5.9A when limited by the silicon at 25°C.
What is the thermal resistance from junction to ambient?
The junction-to-ambient thermal resistance (RθJA) is 62.5 °C/W, based on mounting on a 1 in² pad of 2 oz copper.
Is the device suitable for high-temperature operation?
Yes, the operating junction and storage temperature range extends up to +150°C.
