TSM4946DCS

$0.57

Description：MOSFET 2N-CH 60V 4.5A 8SOP
Series：-

SKU:14b976e2603b Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 4.5A 8SOP
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
Rds On (Max) @ Id, Vgs：55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：910pF @ 24V
Power - Max：2.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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TSM4946DCS

Overview

The TSM4946DCS is a dual N-channel MOSFET array manufactured by Taiwan Semiconductor Corporation. It features a 60V drain-source voltage rating and supports a continuous drain current of 4.5A at 25°C. The device exhibits a maximum on-resistance of 55 milliohms at 10V gate drive and 4.5A current. Key electrical parameters include a gate charge of 30nC at 10V, input capacitance of 910pF at 24V, and a threshold voltage of 3V at 250µA. It operates within a junction temperature range of -55°C to 150°C with a maximum power dissipation of 2.4W. The component is housed in an 8-SOP surface-mount package.

Feature Summary

Dual N-channel configuration for integrated circuit design
Low on-resistance for efficient power switching
Surface-mount construction for automated assembly

Applications

Power management circuits requiring dual channel control
Battery protection modules
Load switching applications

Procurement Notes

Verify the manufacturer part number against official Taiwan Semiconductor documentation to ensure authenticity. Confirm that the specific suffix matches the required 8-SOP package variant. Check RoHS compliance status if environmental regulations apply to the final assembly. Ensure storage conditions align with the specified operating temperature ranges during handling.

Selection Notes

Select this component when a dual N-channel topology is required within a compact footprint. Evaluate the 55 milliohm on-resistance against thermal constraints given the 2.4W power dissipation limit. Verify that the 60V voltage rating provides sufficient headroom for the target application's supply rails. Consider the 8-SOP package dimensions for PCB layout compatibility.

Part Context

This component belongs to the TSM4946 series of dual MOSFET arrays. It serves as a discrete semiconductor solution for managing two independent N-channel paths. The device integrates two transistors into a single package to reduce board space compared to using individual components.