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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.7A 6TDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.7A (Tc)
- Rds On (Max) @ Id, Vgs：50mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1230pF @ 10V
- Power - Max：620mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VDFN Exposed Pad
- Supplier Device Package：6-TDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The TSM500P02DCQ is a dual P-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a -20V drain-source voltage rating and supports a continuous drain current of -4.7A at case temperature. The device is housed in a surface-mount 6-TDFN (2x2) package, offering a maximum power dissipation of 620mW. This component is designed for efficient switching applications requiring compact form factors and reliable performance within its specified electrical limits.
Feature Summary
- Dual P-Channel configuration for space-efficient circuit design
- Surface-mount 6-TDFN package for automated assembly compatibility
- Low on-resistance characteristics for improved efficiency
Applications
- Battery protection circuits
- Power management modules
- Consumer electronics power switches
Procurement Notes
Verify the specific ordering suffix RFG to ensure correct tape-and-reel packaging configuration. Confirm that the requested quantity aligns with standard manufacturing lot sizes. Cross-reference the manufacturer's latest datasheet revision to ensure compliance with updated electrical specifications and mechanical dimensions before finalizing procurement orders.
Selection Notes
Select this component when a dual P-channel MOSFET is required for low-voltage applications. Ensure the thermal environment allows for the 620mW power dissipation limit. Verify that the -20V rating exceeds the maximum circuit voltage. Consider the 6-TDFN footprint constraints during PCB layout to maintain adequate spacing and thermal relief.
Part Context
This part belongs to Taiwan Semiconductor's series of silicon N-Channel and P-Channel MOSFETs. These devices are engineered for general-purpose switching and amplification applications. The TSM500P02DCQ specifically addresses the need for compact, dual-channel solutions in portable and battery-powered electronic systems.
Replacement Considerations
Direct substitutes include other dual P-channel MOSFETs with compatible -20V ratings and similar pin configurations. Verify that alternative parts meet or exceed the -4.7A current capability and fit the 6-TDFN (2x2) package outline to ensure board-level interchangeability without redesign.
