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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A 8PDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
- Rds On (Max) @ Id, Vgs：11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.3nC @ 10V, 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：555pF @ 15V, 2550pF @ 15V
- Power - Max：2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFN (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM5055DCR is an asymmetric dual N-channel power MOSFET in a PDFN56 package. It features a 30V drain-source voltage rating with distinct electrical characteristics for each channel. Q1 has a maximum on-resistance of 11.7mΩ at VGS=10V and 14.9mΩ at VGS=4.5V, while Q2 offers lower resistance at 3.6mΩ (10V) and 5.5mΩ (4.5V). The device supports continuous drain currents up to 38A for Q1 and 107A for Q2 at 25°C case temperature. Thermal performance includes junction-to-case resistances of 4.2°C/W for Q1 and 1.8°C/W for Q2.
Feature Summary
- Asymmetric dual configuration optimizing separate drive requirements
- Low on-state resistance to minimize conductive losses
- Low gate charge enabling fast power switching
- Validated for 100% unclamped inductive switching and gate resistance
Applications
- Intel PowerClaw applications
- Video Graphics Array (VGA) power stages
- Notebook Voltage Core Regulators
Procurement Notes
Verify the specific ordering suffix RLG against the manufacturer's current documentation to confirm reel specifications and packing quantity. Ensure the component meets RoHS directives and WEEE compliance requirements relevant to your manufacturing region before finalizing procurement orders.
Selection Notes
Select this component when an asymmetric dual MOSFET solution is required for low-voltage synchronous rectification. Evaluate the thermal resistance values relative to your board layout constraints. Confirm that the 30V breakdown voltage aligns with the system's operating voltage headroom and transient conditions.
Part Context
This part belongs to Taiwan Semiconductor's portfolio of high-performance power MOSFETs designed for portable computing and graphics applications. The PDFN56 package provides a compact footprint suitable for space-constrained designs while offering efficient heat dissipation through exposed pad mounting.
Replacement Considerations
No public substitute part numbers are documented in the provided datasheet. Verify pinout compatibility and electrical parameters if considering alternative manufacturers' components for this application.
