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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A 8PDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
- Rds On (Max) @ Id, Vgs：11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.3nC @ 10V, 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：555pF @ 15V, 2550pF @ 15V
- Power - Max：2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFN (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM5055DCR is an asymmetric dual N-channel power MOSFET manufactured by Taiwan Semiconductor. It features a 30V drain-source voltage rating and utilizes an 8-pin PDFN-8 (5x6) surface-mount package. The device supports a continuous drain current of 107A at case temperature and 38A at ambient temperature, with a peak pulsed current capacity of 20A. Key electrical parameters include a gate threshold voltage of 2.5V and a reverse transfer capacitance of 276pF. Power dissipation capabilities reach 69W at the case level and 2.2W to 2.4W in free air.
Feature Summary
- Asymmetric dual N-channel configuration for efficient circuit design
- Low voltage operation optimized for high-current applications
- Surface-mount packaging suitable for automated assembly
Applications
- Power management circuits requiring dual channel isolation
- Battery protection systems
- Motor control interfaces
Procurement Notes
Verify the specific ordering suffix RLG against the manufacturer's official documentation to confirm tape-and-reel specifications. Ensure that the requested component matches the exact pinout and thermal characteristics defined in the datasheet. Cross-reference the part number with authorized distributors to validate authenticity and avoid counterfeit components.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage power switching. Consider the thermal resistance limits and the distinction between ambient and case temperature current ratings during PCB layout. Verify that the 30V rating aligns with the system's maximum operating voltage to ensure reliable performance under all conditions.
Part Context
This part belongs to Taiwan Semiconductor's low voltage MOSFET portfolio, designed for modern electronic applications demanding high efficiency and small form factors. The PDFN-8 package provides improved thermal performance compared to traditional packages, supporting higher current densities in space-constrained designs.
Replacement Considerations
Consult the official datasheet for direct pin-compatible substitutes. Verify that any alternative component matches the 30V rating, dual N-channel topology, and 8-PDFN footprint before implementation.
