TSM60NB600CH

$1.28

Description：600V, 7A, SINGLE N-CHANNEL POWER
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tube

SKU:32f912f6952a Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

TSM60NB600CH is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 600V, 7A, SINGLE N-CHANNEL POWER. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM60NB600CH

Description：600V, 7A, SINGLE N-CHANNEL POWER
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：516 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：63W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251 (IPAK)
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for TSM60NB600CH

TSM60NB600CH

Single FETs, MOSFETs Overview

The TSM60NB600CH is a single N-Channel Power MOSFET manufactured by Taiwan Semiconductor. It utilizes Super-Junction technology to achieve high performance with a low figure-of-merit. The device features a breakdown voltage of 600V and a maximum on-resistance of 0.6 ohms. It supports a continuous drain current of 8A and has a gate charge of 13nC. Available in ITO-220 and TO-251 (IPAK) packages, it offers high ruggedness and commutation performance suitable for power supply applications.

Single FETs, MOSFETs Feature Summary

Super-Junction technology implementation
High ruggedness performance
High commutation performance

Single FETs, MOSFETs Applications

Power Supply
Lighting

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix against official documentation, as ordering codes like CHC5G indicate specific package or tape-and-reel configurations. Confirm pin definitions for Gate, Drain, and Source match the intended PCB layout. Ensure thermal management aligns with the specified package capabilities. Cross-reference the datasheet version to confirm parameter consistency before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600V blocking capability with moderate current handling. The 0.6 ohm on-resistance balances conduction losses with switching efficiency. Consider the ITO-220 or TO-251 package based on available board space and thermal dissipation requirements. Verify that the 13nC gate charge fits within the driver's output current capabilities for optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the TSM60N series of N-Channel Power MOSFETs from Taiwan Semiconductor. It shares the core Super-Junction architecture with other variants in the lineup but differs in specific electrical ratings and packaging options. The series targets general-purpose power switching applications where efficiency and reliability are critical.