TSM6502CR

TSM6502CR

$0.82
  • Description:MOSFET N/P-CH 60V 24A 8PDFN
  • Series:-

SKU:426cdcedc997 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 60V 24A 8PDFN
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:24A (Tc), 18A (Tc)
  • Rds On (Max) @ Id, Vgs:34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.3nC @ 4.5V, 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1159pF @ 30V, 930pF @ 30V
  • Power - Max:40W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-PDFN (5x6)
  • Grade:-
  • Qualification:-

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TSM6502CR

Overview

The TSM6502CR is a complementary dual MOSFET array manufactured by Taiwan Semiconductor Corporation. It integrates one N-channel and one P-channel power transistor in an 8-PowerTDFN (5x6) surface-mount package. The device supports a drain-to-source voltage of 60V for both channels. Continuous drain current ratings are specified at 24A for the N-channel and 18A for the P-channel, measured at case temperature. The component is designed for high-power applications requiring efficient switching with a maximum power dissipation of 40W.

Feature Summary

  • Complementary dual configuration integrating N-channel and P-channel MOSFETs in a single package
  • High current handling capability with 24A continuous drain rating for the N-channel device
  • Surface-mount design utilizing 8-PowerTDFN packaging for compact board space utilization

Applications

  • DC-DC converter circuits requiring synchronous rectification
  • Motor control driver stages for low-voltage systems
  • Power management modules in portable electronic devices

Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel configuration matches your automated assembly requirements. Confirm that the thermal pad connection aligns with your PCB copper pour design to achieve the rated 40W power dissipation. Ensure the 8-PDFN footprint dimensions match the manufacturer's recommended land pattern to prevent soldering defects during reflow processes.

Selection Notes

Select this component when a matched pair of N and P-channel MOSFETs is required for bridge or half-bridge topologies. The 60V rating suits low-voltage DC bus applications. Consider the 8-PowerTDFN package for its thermal performance relative to standard plastic packages. Verify gate charge parameters if high-frequency switching efficiency is critical for the target application design.

Part Context

This part belongs to the TSM650 series of power MOSFETs from Taiwan Semiconductor. The series offers various voltage and current combinations in different surface-mount packages. The TSM6502CR specifically addresses the need for complementary pairs in a small form factor, distinguishing it from single-channel variants within the same product family line.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 60V Vdss, 24A/18A Id ratings, and 8-PDFN (5x6) package dimensions. Verify pinout compatibility and thermal characteristics before substituting with other manufacturers' complementary dual MOSFET arrays.

TSM6502CRTSM6502CR
$0.82
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