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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 12A 8PDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Rds On (Max) @ Id, Vgs：68mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：870pF @ 30V
- Power - Max：3.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFN (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM680P06DPQ56 RLG is a dual P-channel MOSFET manufactured by Taiwan Semiconductor. It features a -60V drain-source voltage and a continuous drain current of -12A at 25°C case temperature. The device exhibits a maximum on-resistance of 68mΩ at VGS = -10V and 110mΩ at VGS = -4.5V. Total gate charge is specified at 16.4nC. Thermal resistance from junction to case is 4.5°C/W, while junction-to-ambient resistance is 85°C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration for efficient power switching
- Low thermal resistance package design
- Fast switching capability with low gate charge
- Compliant with RoHS directive and halogen-free standards
Applications
- Power supply circuits
- Motor control systems
Procurement Notes
Verify the component against the official datasheet document number DS_P0000162 version B1710. Confirm the marking diagram matches the year, month, and lot code specifications provided in the manufacturer's documentation. Ensure the PDFN56 Dual package dimensions align with the suggested pad layout requirements for proper surface mount assembly.
Selection Notes
Select this component when designing circuits requiring dual P-channel MOSFETs with a -60V rating. Consider the 68mΩ on-resistance for efficiency calculations at VGS = -10V. Evaluate the 4.5°C/W junction-to-case thermal resistance for heat dissipation planning. Verify that the operating temperature range meets the environmental requirements of the target application.
Part Context
This part belongs to the TSM680P06D series of dual P-channel MOSFETs. It is designed for applications needing compact solutions with low profile packaging. The PDFN56 Dual package provides a balance between electrical performance and thermal management. The component is suitable for integration into modern electronic devices requiring reliable power switching capabilities.
Replacement Considerations
Check for direct substitutes within the same product family or similar specifications. Ensure any replacement maintains the -60V rating and compatible package dimensions. Verify that the new component meets the same thermal and electrical performance criteria as the original TSM680P06DPQ56 RLG.
