TSM680P06DPQ56

$0.82

Description：MOSFET 2P-CH 60V 12A 8PDFN
Series：-

SKU:62d5dfe9126b Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 60V 12A 8PDFN
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Rds On (Max) @ Id, Vgs：68mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：870pF @ 30V
Power - Max：3.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-PDFN (5x6)
Grade：-
Qualification：-

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TSM680P06DPQ56

Overview

The TSM680P06DPQ56 is a dual P-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor. It features a PDFN-56-8 surface-mount package and utilizes silicon technology. The device supports a drain-source voltage of 60 V and delivers a continuous drain current of 12 A. Key electrical characteristics include a maximum on-resistance of 54 mΩ, a gate threshold voltage of 1.2 V, and a total gate charge of 16.4 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 3.5 W. The component holds AEC-Q101 qualification for automotive reliability.

Feature Summary

Dual P-channel configuration in a compact surface-mount package
Automotive-grade reliability through AEC-Q101 qualification
Low on-resistance for efficient power switching

Applications

Automotive electronic control units
Power management circuits
Load switching applications

Procurement Notes

Verify the specific ordering suffix RLG against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the part number matches the exact datasheet version required for your design. Confirm RoHS compliance status directly from the supplier's certified documentation before finalizing procurement orders.

Selection Notes

Select this component when a dual P-channel solution is required in a small form factor. The 60 V rating suits low-voltage automotive systems. Verify that the 12 A current capability meets the load requirements. Consider the thermal performance given the 3.5 W power dissipation limit in the PDFN-56-8 package during high-duty cycle operations.

Part Context

This part belongs to the Taiwan Semiconductor MOSFET portfolio, specifically designed for power switching applications. It falls under the category of P-channel transistors suitable for SMD/SMT installation. The product line emphasizes automotive-grade components compliant with industry standards.

Replacement Considerations

Consult official substitution guides from Taiwan Semiconductor for verified alternatives. Cross-reference pinouts and electrical parameters carefully. No public substitute part numbers are confirmed in the available data.