TSM6968DCA RVG

TSM6968DCA RVG

  • Description:MOSFET 2N-CH 20V 6.5A 8TSSOP
  • Series:-

SKU:504a301d6189 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 6.5A 8TSSOP
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
  • Rds On (Max) @ Id, Vgs:22mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:950pF @ 10V
  • Power - Max:1.04W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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TSM6968DCA RVG

Overview

The TSM6968DCA RVG is a dual N-channel enhancement-mode MOSFET manufactured by Taiwan Semiconductor. It features a common-drain configuration housed in an 8-pin TSSOP surface-mount package with dimensions of 4.5mm length and 1.05mm height. The device supports a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 6.5A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 40mΩ, a typical forward voltage (Vf) of 1.2V, and a typical gate charge (Qg) of 20nC at the specified Vgs. The component operates within a temperature range of -55°C to 150°C, dissipates up to 1.5W of power, and includes ESD protection rated at 2kV.

Feature Summary

  • Dual N-channel enhancement-mode MOSFETs integrated into a single common-drain package for space-efficient circuit design.
  • Low on-resistance characteristic enabling efficient power switching with minimal conduction losses.
  • Robust electrostatic discharge protection rated at 2kV to safeguard sensitive high-speed data lines.
  • Wide operating temperature range supporting reliable performance in demanding thermal environments.

Applications

  • Protection of high-speed data interfaces such as USB and HDMI ports against electrostatic discharge.
  • Power management circuits in portable consumer electronics requiring compact dual-switch solutions.
  • Signal routing and switching applications in mobile devices and embedded systems.

Procurement Notes

Verify the specific ordering suffix RVG to confirm tape-and-reel packaging and lead-free compliance before procurement. Confirm that the TSSOP-8 footprint matches the target PCB layout constraints. Ensure the 20V voltage rating aligns with the system's maximum operational limits to prevent breakdown. Validate that the 6.5A current capacity meets the peak load requirements of the intended application without exceeding thermal dissipation limits.

Selection Notes

Select this component when a dual N-channel configuration is required in a low-profile surface-mount package. The 20V rating suits low-voltage logic-level switching applications. Consider the 40mΩ on-resistance for efficiency-critical designs. Verify compatibility with standard reflow soldering profiles for TSSOP packages. Evaluate the 2kV ESD rating if protecting sensitive input/output lines from static events.

Part Context

This part belongs to the TSM6968D series of dual MOSFETs from Taiwan Semiconductor. It is designed for applications requiring two independent N-channel switches in a shared package. The common-drain topology distinguishes it from common-source configurations. The RVG suffix typically denotes specific packaging or environmental compliance attributes defined by the manufacturer.

Replacement Considerations

Direct substitutes must match the 20V/6.5A rating, TSSOP-8 package, and dual N-channel common-drain configuration. Verify pinout compatibility and on-resistance values to ensure equivalent performance. Check for identical ESD protection ratings if used in sensitive signal paths. Consult manufacturer cross-reference lists for verified alternatives.

TSM6968DCA RVGTSM6968DCA RVG

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