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TSM7NC60CF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 600V, 7A, SINGLE N-CHANNEL POWER. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TSM7NC60CF
- Description：600V, 7A, SINGLE N-CHANNEL POWER
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1169 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：44.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220S
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for TSM7NC60CF
Single FETs, MOSFETs Overview
The TSM7NC60CF is a single N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 7A at case temperature. The device is housed in an ITO-220S through-hole package, providing a power dissipation rating of 44.6W under case conditions. This component is designed for high-voltage switching applications requiring robust performance in a standard axial leaded form factor.
Single FETs, MOSFETs Feature Summary
- Single N-channel enhancement mode construction
- Through-hole mounting via ITO-220S package
- High voltage blocking capability up to 600V
Single FETs, MOSFETs Applications
- High voltage DC-DC converter circuits
- Inductive load switching systems
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the exact datasheet revision and electrical test conditions provided by Taiwan Semiconductor Corporation before finalizing design integration. Confirm that the ITO-220S package dimensions and thermal characteristics align with your specific PCB layout and heat sinking requirements. Ensure compliance with RoHS and REACH directives as specified in the official product documentation.
Single FETs, MOSFETs Selection Notes
Select this component when a through-hole N-channel MOSFET with 600V rating and approximately 7A continuous current capacity is required. The ITO-220S package offers a balance between thermal performance and ease of manual assembly or wave soldering. Consider the 44.6W power dissipation limit relative to your ambient temperature and heatsinking strategy to ensure reliable operation within safe operating area limits.
Single FETs, MOSFETs Part Context
This part belongs to the discrete semiconductor category, specifically within the single N-channel power MOSFET segment. Taiwan Semiconductor Corporation utilizes silicon technology for this device, targeting industrial and consumer power management applications where through-hole reliability is preferred over surface mount alternatives.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include TK8A60DA from Toshiba Semiconductor and Storage. Other similar options found in public databases are AOTF8N65 from Alpha & Omega Semiconductor, IPA80R1K2P7XKSA1 from Infineon Technologies, and RJK6012DPP-E0#T2 from Renesas Electronics Corporation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
