TSM8588CS RLG

$0.86

Description：MOSFET N/P-CH 60V 2.5A 8SOP
Series：-

SKU:84cb7aa758ce Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 2.5A 8SOP
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs：103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.4nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：527pF @ 30V, 436pF @ 30V
Power - Max：1.4W (Ta), 5.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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TSM8588CS RLG

Overview

The TSM8588CS RLG is a complementary N and P-channel power MOSFET array housed in an SOP-8 package. It features a drain-source voltage of 60V for the N-channel and -60V for the P-channel. The continuous drain current reaches 5A at 25°C case temperature, with a maximum on-state resistance of 103mΩ at VGS=10V for the N-channel and 180mΩ at VGS=-10V for the P-channel. Total gate charge is 9.4nC for the N-channel and 9nC for the P-channel at VGS=10V. The device supports a junction temperature range from -55°C to +150°C and includes 100% UIS and Rg testing.

Feature Summary

Complementary N and P-channel configuration for efficient half-bridge or full-bridge driving applications
Low gate charge characteristics designed to facilitate fast power switching speeds
Manufactured with 100% Unclamped Inductive Switching (UIS) and Gate Resistance (Rg) testing for enhanced reliability

Applications

Building technologies
DC Fan control circuits
Motor drives

Procurement Notes

Verify the specific ordering code TSM8588CS RLG against the manufacturer's datasheet version A1811 to ensure correct SOP-8 packaging and 2,500pcs per reel quantity. Confirm RoHS 2011/65/EU compliance and halogen-free status according to IEC 61249-2-21 standards prior to integration into final assemblies.

Selection Notes

Select this component when a matched N/P-channel pair is required within a compact SOP-8 footprint. Ensure the application operates within the 60V drain-source voltage limit and accounts for the thermal resistance values provided in the absolute maximum ratings table for proper heat dissipation design.

Part Context

This part belongs to the TSM8588 series of complementary power MOSFETs manufactured by Taiwan Semiconductor Corporation. It serves as a discrete solution for replacing dual discrete transistors in space-constrained designs requiring synchronized switching characteristics for both high-side and low-side configurations.