TSM8588CV RGG

$0.76

Description：-60V, -4.5A, COMPLEMENTARY P-CHA
Series：-

SKU:8e797422f0ca Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：-60V, -4.5A, COMPLEMENTARY P-CHA
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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TSM8588CV RGG

Overview

The TSM8588CV RGG is a dual N- and P-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a PDFN33 Dual package with a drain-source voltage rating of 60V for the N-channel and -60V for the P-channel. The device offers low on-resistance, with maximum values of 98mΩ at VGS=10V for the N-channel and 168mΩ at VGS=-10V for the P-channel. Continuous drain currents reach 8.2A (N-ch) and -6.6A (P-ch) at TC=25°C. Total gate charges are 9.6nC (N-ch) and 8.6nC (P-ch). Thermal resistance from junction to case is 9.2°C/W. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Low gate charge design enables fast power switching capabilities.
Manufactured with 100% UIS and Rg testing for reliability assurance.
RoHS compliant and halogen-free construction.

Applications

BLDC Fan
Motor Drives

Procurement Notes

Verify the specific ordering code TSM8588CV RGG against official Taiwan Semiconductor documentation to confirm the PDFN33 Dual packaging and reel quantity specifications. Ensure that the application environment remains within the absolute maximum ratings defined in the datasheet, particularly regarding thermal management and pulse current limits.

Selection Notes

Select this component for applications requiring complementary N- and P-channel switching in a compact surface-mount footprint. Consider the thermal resistance and power dissipation characteristics when designing heat sinks or PCB copper areas. Verify compatibility with drive voltages, as on-resistance varies significantly between VGS levels of 4.5V and 10V.

Part Context

This part belongs to the TSM8588 series of dual MOSFETs from Taiwan Semiconductor. It is designed for general-purpose power switching applications where space efficiency and switching speed are critical. The PDFN33 Dual package provides a balance between thermal performance and board space savings compared to larger packages.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing should be performed carefully based on pinout compatibility, electrical parameters, and package dimensions.

FAQ

What is the thermal resistance from junction to case for the TSM8588CV?

The thermal resistance from junction to case (RθJC) is 9.2°C/W for both the N-channel and P-channel devices.

Does the TSM8588CV support avalanche energy?

Yes, the datasheet specifies single pulse avalanche current (IAS) and energy (EAS) ratings for both channels, indicating capability for limited avalanche operation under specified test conditions.