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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6A 8SOP
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：562pF @ 8V
- Power - Max：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The TSM9926DCS RLG is a dual N-channel enhancement mode field effect transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum drain-source voltage of 20V and a continuous drain current rating of 4.5A. The device exhibits an on-resistance of 30 milliohms at a gate-source voltage of 4.5V, and 40 milliohms at 2.5V. This component utilizes a super high dense cell design to achieve extremely low on-resistance, supporting high power and current handling capabilities. It is housed in a surface mount TSSOP-8 package.
Feature Summary
- Dual N-channel enhancement mode configuration
- Super high dense cell design for low on-resistance
- High power and current handling capability
- Surface mount TSSOP-8 package
Applications
- Power management circuits
- Load switching applications
- DC-DC converter output stages
Procurement Notes
Verify the manufacturer marking and date code against official Taiwan Semiconductor documentation. Confirm the specific suffix matches the requested TSSOP-8 package variant. Ensure authenticity through authorized distribution channels to avoid counterfeit components.
Selection Notes
Select this component when a dual N-channel MOSFET with low on-resistance is required for compact designs. Consider the 20V voltage rating and 4.5A current capacity for appropriate thermal management. Verify gate drive voltage compatibility with the specified on-resistance thresholds.
Part Context
This part belongs to the family of dual N-channel enhancement mode field effect transistors. It shares functional similarities with other dual MOSFETs designed for space-constrained power applications. The TSSOP-8 package provides a compact solution for integrating two independent channels in a single footprint.
Replacement Considerations
Evaluate alternatives based on matching voltage, current, and on-resistance specifications. Verify pinout compatibility for direct replacement in existing layouts. Check package dimensions to ensure mechanical fit within the assembly constraints.
