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TT520N22KOFXPSA1 is listed in the SCRs - Modules range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is THYR / DIODE MODULE DK. Review the specifications below when checking this part for your BOM.
The Infineon TT520N22KOFXPSA1 is a phase control thyristor module utilizing pressure contact technology and Advanced Medium Power Technology (AMPT). It features an electrically insulated base plate and supports a repetitive peak forward/reverse voltage of 2200 V. The average on-state current is rated at 520 A at a case temperature of 85 °C, with a surge current capacity of 14500 A at maximum junction temperature. Key electrical parameters include a threshold voltage of 0.85 V, slope resistance of 0.35 mΩ, and a thermal resistance from junction to case of 0.055 K/W under DC conditions.
Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure that any assumed functional differences based solely on suffix variations are validated through direct manufacturer sources or certified datasheets before procurement decisions are finalized.
Select this component for high-power phase control applications requiring robust mechanical mounting via pressure contact. Evaluate thermal management requirements against the specified junction-to-case thermal resistance. Confirm that the system's voltage and current transients remain within the defined surge and critical rate of rise limits provided in the technical data.
This module belongs to the Netz-Thyristor-Modul series designed for grid-connected power electronics. It utilizes silicon pellets assembled with pressure contact technology to ensure durability. The 60 mm base plate format aligns with standard industrial mounting practices for medium to high power conversion systems.
Publicly confirmed substitute part numbers are not available in the verified source material. Consult official Infineon resources for potential cross-references or updated product line replacements if this specific variant is discontinued.
The maximum gate trigger current is 250 mA at a junction temperature of 25 °C and a forward voltage of 12 V.
The critical rate of rise of on-state current ((diT/dt)cr) is 200 A/µs, tested according to DIN IEC 747-6 standards.
The insulation test voltage is 3.0 kV RMS for 1 minute and 3.6 kV RMS for 1 second at 50 Hz.
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