TT8J11TCR

$0.79

Description：MOSFET 2P-CH 12V 3.5A 8TSST
Series：-

SKU:793c77be79bf Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 12V 3.5A 8TSST
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：3.5A
Rds On (Max) @ Id, Vgs：43mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：2600pF @ 6V
Power - Max：650mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：8-TSST
Grade：-
Qualification：-

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TT8J11TCR

Overview

The TT8J11TCR is a dual P-channel silicon MOSFET array manufactured by ROHM Semiconductor. It features an 8-pin TSST surface-mount package and operates with a drain-source voltage of 12V and a continuous drain current of 3.5A. The device has a maximum power dissipation of 650mW and supports logic-level gate drive at 1.5V. Key electrical parameters include a gate-source voltage range of ±10V, a threshold voltage of 1.2V, and a gate charge of 7nC. The component is rated for operation between -55°C and +150°C.

Feature Summary

Dual P-channel configuration in a compact TSST-8 package
Logic-level gate drive capability optimized for 1.5V systems
Enhancement mode operation with low threshold voltage

Applications

Low-voltage DC-DC converter circuits
Battery protection and management systems
Power switching applications in portable electronics

Procurement Notes

Verify the specific lifecycle status before integration, as this component may be subject to obsolescence notices. Confirm that the TSST-8 footprint matches your PCB design requirements. Ensure that the 12V rating and 3.5A current limit align with your circuit's peak demands. Check for RoHS compliance documentation if required by your manufacturing standards. Validate thermal performance within the specified temperature range during system testing.

Selection Notes

Select this component when a dual P-channel solution is required for low-voltage logic interfaces. The 1.5V drive capability makes it suitable for modern microcontrollers with lower output voltages. Consider the 12V breakdown voltage for compatibility with standard battery packs. Evaluate the 650mW power dissipation against your thermal management capabilities. Compare gate charge specifications against switching frequency requirements to ensure efficient operation.

Part Context

This part belongs to ROHM's series of dual MOSFET arrays designed for space-constrained applications. The TSST-8 package provides a compact form factor compared to discrete components. It serves as an alternative to single-channel solutions where paired P-channel switches are needed. The family focuses on logic-level compatibility and low on-resistance characteristics for efficient power handling.