TT8K1TR

Overview

The TT8K1TR is a dual N-channel MOSFET array manufactured by ROHM Semiconductor, designed for low-voltage logic-level switching applications. It features a TSST8 surface-mount package with dimensions of 1.9x3.0 mm and a thickness of 0.85 mm. The device supports a drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 2.5 A. Key electrical parameters include a typical gate charge (Q_g) of 3.6 nC and a threshold voltage (V_GS(th)) of 1 V. The component is RoHS compliant and operates within a storage temperature range of -55°C to 150°C.

Feature Summary

• Dual N-channel configuration optimized for logic-level drive voltages
• Compact TSST8 surface-mount package suitable for space-constrained designs
• Low gate charge characteristics enabling faster switching speeds
• Compliant with RoHS standards for lead-free manufacturing

Applications

• Power supply circuits requiring low-side switching
• General-purpose logic level translation interfaces
• Battery protection modules in portable electronics

Procurement Notes

Verify the part status carefully before procurement as the TT8K1TR may be classified as obsolete or end-of-life depending on the specific manufacturer update cycle. Confirm availability through authorized distributors only. Ensure that the ordering suffix matches the required tape and reel quantity specifications. Cross-reference with the latest datasheet revision to confirm pinout compatibility and electrical parameter tolerances prior to finalizing purchase orders.

Selection Notes

Select this component when a dual N-channel MOSFET with a 20 V rating and 2.5 A current capacity is required in a small footprint. The 1 V threshold voltage makes it suitable for systems driven by 1.8 V or 3.3 V logic sources. Consider the thermal dissipation capabilities of the TSST8 package for high-duty cycle applications. Compare gate charge values against competitors to ensure switching speed meets system timing requirements.

Part Context

The TT8K1TR belongs to ROHM's family of dual N-channel MOSFET arrays designed for efficient power management in compact electronic devices. It shares architectural similarities with other logic-level FETs from the manufacturer but is distinct in its specific voltage and current ratings. This part is often utilized in conjunction with other passive components to form complete power switching stages in consumer and industrial equipment.

Replacement Considerations

Check for direct substitutes such as the TT8K2 series if higher drive voltage compatibility is needed. Verify pin-to-pin compatibility and electrical parameter overlaps with alternative dual N-channel MOSFETs from other manufacturers before design substitution.