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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 2.5A 8TSST
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.5A
- Rds On (Max) @ Id, Vgs：90mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：180pF @ 10V
- Power - Max：1.25W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-TSST
- Grade：-
- Qualification：-
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Overview
The TT8K2TR is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It operates with a 2.5V gate drive voltage and features an 8-pin TSST8 surface-mount package measuring 1.9x3.0 mm. Key electrical parameters include a drain-source voltage of 30V and a continuous drain current of 2.5A. The typical on-resistance (RDS(on)) is 0.095Ω at VGS=2.5V, decreasing to 0.065Ω at VGS=4.5V. Total gate charge is 3.2nC, with power dissipation rated at 1.25W. The device supports a storage temperature range from -55°C to 150°C.
Feature Summary
- Low on-state resistance combined with fast switching capabilities
- Optimized for low voltage drive at 2.5V
- Compact surface mount packaging for space-constrained designs
Applications
- Switching circuits in portable electronic devices
- Power supply management systems requiring low drive voltage
- Battery-powered equipment utilizing efficient power control
Procurement Notes
Verify the specific ordering suffix TR against official datasheets to confirm taping specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the component matches the required pinout and thermal characteristics for the intended PCB layout before finalizing procurement decisions.
Selection Notes
Select this component when a dual N-channel configuration is required with a 2.5V logic interface. Evaluate the RDS(on) performance at the specific operating gate voltage to ensure efficiency meets system requirements. Consider the TSST8 package dimensions and thermal dissipation limits relative to the available board space and ambient conditions.
Part Context
The TT8K2TR belongs to ROHM's series of dual MOSFETs optimized for low-voltage operation. It integrates two N-channel transistors into a single compact package, reducing footprint compared to discrete solutions. This integration aids in simplifying circuit design while maintaining high switching performance for modern portable electronics.
Replacement Considerations
Check for direct substitutes within the same TSST8 package family that maintain identical pinouts and electrical ratings. Verify compatibility with existing gate drive voltages and thermal management strategies when considering alternative part numbers.
