TT8M2TR

$0.29

Description：MOSFET N/P-CH 30V/20V 2.5A 8TSST
Series：-

SKU:eeb6ee999ff1 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V/20V 2.5A 8TSST
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V, 20V
Current - Continuous Drain (Id) @ 25°C：2.5A
Rds On (Max) @ Id, Vgs：90mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：180pF @ 10V
Power - Max：1.25W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：8-TSST
Grade：-
Qualification：-

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TT8M2TR

Overview

The TT8M2TR is a dual complementary MOSFET manufactured by ROHM Semiconductor, integrating an N-channel and a P-channel device within a single TSST-8 surface-mount package. The N-channel transistor supports a drain-source voltage of 30V with a typical on-state resistance of 95mΩ at VGS=4V. The P-channel counterpart provides a 20V rating and a typical on-state resistance of 68mΩ at VGS=-4.5V. Designed for low-voltage drive applications, the component features a total gate charge of 3.2nC for the N-channel and 2.5nC for the P-channel. It operates within a temperature range of -55°C to +150°C and dissipates up to 1W of power.

Feature Summary

Complementary structure combining N-channel and P-channel silicon MOSFETs in one package
Optimized for low-voltage logic drive compatibility
High thermal performance utilizing a dedicated high-power surface mount package

Applications

DC-DC converter switching circuits
Motor driver bridge configurations
Power management IC output stages

Procurement Notes

Verify current availability status as this specific part number may be subject to discontinuation or limited distribution channels. Confirm RoHS compliance documentation matches the required environmental standards for your manufacturing process. Ensure the ordering suffix corresponds to the correct taping quantity specifications before finalizing purchase orders.

Selection Notes

Select this component when space-constrained designs require matched N/P channel characteristics without separate footprint allocation. Evaluate the 30V/20V breakdown ratings against peak transient voltages in the target circuit. Consider the 1W power dissipation limit and ensure adequate PCB copper area is allocated for thermal management during continuous operation.

Part Context

This component belongs to ROHM's complementary MOSFET family designed for efficient power switching. It serves as a direct integration solution replacing discrete dual-transistor setups. The TSST-8 package allows for automated surface-mount assembly, reducing board space compared to traditional through-hole or separate SMD implementations.