TTC004B,Q

$0.77

Description：TRANS NPN 160V 1.5A TO-126N
Series：-

SKU:cab582f6d639 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

TTC004B,Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 160V 1.5A TO-126N. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for TTC004B,Q

Description：TRANS NPN 160V 1.5A TO-126N
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1.5 A
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：140 @ 100mA, 5V
Power - Max：10 W
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126N
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for TTC004B,Q

TTC004B,Q

Single Bipolar Transistors Overview

The TTC004B is a silicon NPN epitaxial type bipolar transistor manufactured by Toshiba Semiconductor and Storage. It features a minimum collector-emitter breakdown voltage of 160 V and a typical transition frequency of 100 MHz. The device has a maximum DC collector current rating of 1.5 A and a power dissipation capacity of 1.5 W at 25 °C case temperature. It utilizes a TO-126N package with an emitter-collector-base pinout configuration.

Single Bipolar Transistors Feature Summary

Designed for audio-frequency amplifier applications
Complementary to the TTA004B PNP transistor
High collector output capacitance performance

Single Bipolar Transistors Applications

Audio-Frequency Amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance varies by production lot. Confirm that the specific ordering suffix matches the required lead-free or tin/lead termination specifications. Review the latest reliability handbook for derating concepts before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high collector voltage ratings up to 160 V. Ensure thermal management maintains junction temperatures below 150 °C during operation. Verify that the TO-126N package dimensions align with the target printed circuit board layout constraints.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba Bipolar Transistors Silicon NPN Epitaxial Type series. Commercial production began in May 2013. The device is intended for general-purpose amplification tasks within consumer electronics and industrial control systems where moderate power handling is required.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the TTA004B as the complementary counterpart. No other direct substitute part numbers are documented in the official specification.