UF28150J

Overview

The UF28150J is an RF Power MOSFET Transistor manufactured by MACOM Technology Solutions. It operates within the 100 to 500 MHz frequency range and delivers a power output of 150 W at a drain voltage of 28 V. The device utilizes a DMOS structure with a common source configuration. Key electrical specifications include a drain-source breakdown voltage of 65 V, a maximum junction temperature of 200 °C, and a thermal resistance of 0.45 °C/W. At 500 MHz, it achieves a power gain of 8 dB and a drain efficiency of 55%.

Feature Summary

• DMOS structure designed for broadband operation
• Lower capacitance characteristics optimized for wideband applications
• Common source configuration for standard integration

Applications

• Broadband RF amplification systems
• Military communication equipment
• Electronic warfare subsystems

Procurement Notes

Verify the specific revision status against the latest official datasheet before procurement. Confirm that the ordering suffix matches the required package and testing criteria. Ensure all handling procedures strictly follow electrostatic discharge (ESD) control guidelines due to device sensitivity. Validate supply chain authenticity through authorized channels only.

Selection Notes

Select this component when designing circuits requiring high power output in the 100-500 MHz spectrum. Evaluate thermal management requirements based on the specified thermal resistance and maximum junction temperature limits. Consider the load mismatch tolerance capabilities for robust system performance under varying impedance conditions.

Part Context

This part belongs to the MACOM RF Power MOSFET transistor portfolio. It is engineered for high-power radio frequency applications where broadband performance is critical. The device integrates silicon DMOS technology to provide reliable operation in demanding electronic environments.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' devices without comprehensive electrical validation.

FAQ

What is the maximum load mismatch tolerance?

The device supports a load mismatch tolerance of up to 10:1 VSWR at all phase angles.

How does the device handle static electricity?

The DMOS devices are sensitive to electrostatic discharge (ESD). Proper ESD control techniques must be used during handling to prevent damage.

What is the typical gate threshold voltage range?

The forward gate threshold voltage ranges from 2.0 V to 6.0 V under specified test conditions.