UF2840P

Overview

The UF2840P is an N-channel silicon RF MOSFET transistor manufactured by MACOM. It operates within a frequency range of 100 MHz to 500 MHz and delivers a continuous output power of 40 W. The device features a drain-source breakdown voltage (Vds) of 65 V and supports a maximum continuous drain current of 4 A. It provides a gain of 10 dB and functions at temperatures up to +200°C. The component utilizes a screw mount installation style.

Feature Summary

• N-channel silicon construction for RF applications
• Screw mount package design for thermal management
• High-temperature operation capability

Applications

• RF power amplification in the 100-500 MHz band
• Wireless transmission systems
• Broadband RF circuits

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with MACOM or authorized distributors before procurement. Confirm that the screw mount mechanical dimensions match the target assembly requirements. Ensure the operating environment does not exceed the specified maximum junction temperature of +200°C during system integration.

Selection Notes

Select this component when a 40 W output power level is required within the 100-500 MHz frequency spectrum. The 65 V breakdown voltage suits applications requiring moderate drain bias. Consider the screw mount form factor if board space allows for direct chassis mounting to leverage its thermal performance characteristics.

Part Context

This part belongs to the MACOM RF MOSFET transistor family, designed for high-power radio frequency applications. It complements other discrete semiconductor solutions used in wireless infrastructure. The device represents a silicon-based approach to RF power amplification, distinct from LDMOS or GaN technologies often found in similar frequency bands.

Replacement Considerations

No public confirmed substitute part numbers are available for this specific model.