UF4C120070B7SSB

Single FETs, MOSFETs Overview

The UF4C120070B7S is a 1200 V, 72 mΩ EliteSiC Gen 4 SiC FET in a TO-263-7 package. It utilizes a cascode configuration of a normally-on SiC JFET and a Si MOSFET to achieve normally-off operation with standard gate drive compatibility (0 to 15 V). Key electrical parameters include a continuous drain current of 25.7 A at 25 °C, a maximum junction temperature of 175 °C, and a total gate charge of 37.8 nC. The device features an excellent reverse recovery charge of 101 nC and low intrinsic capacitance.

Single FETs, MOSFETs Feature Summary

• Cascode architecture combining SiC JFET and Si MOSFET for enhanced performance
• Standard gate drive compatibility eliminating the need for negative voltage bias
• Ultra-low gate charge and exceptional reverse recovery characteristics
• Robust ESD protection meeting HBM Class 2 and CDM Class C3 standards

Single FETs, MOSFETs Applications

• EV Charging
• PV Inverters
• Switch Mode Power Supplies
• Power Factor Correction Modules
• Induction Heating

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'B7SS' against official documentation, as the datasheet lists 'UF4C120070B7S'. Confirm tape and reel specifications if automated assembly is required. Ensure thermal management design accounts for the 183 W power dissipation limit at 25 °C case temperature. Validate that the TO-263-7 package dimensions align with the target PCB footprint.

Single FETs, MOSFETs Selection Notes

Select this component when replacing silicon IGBTs or superjunction devices without altering gate driver circuits. The 72 mΩ on-resistance offers a balance between conduction loss and cost for 800V bus architectures. Consider the 175 °C operating temperature for high-power density designs. Evaluate snubber requirements to optimize switching energy and EMI suppression during turn-on and turn-off transitions.

Single FETs, MOSFETs Part Context

This device belongs to the EliteSiC Gen 4 series from onsemi, designed for high-efficiency power conversion. It represents a transition technology bridging traditional silicon devices and bare die SiC MOSFETs by offering discrete packaging with SiC performance benefits. The cascode approach simplifies integration into existing systems while maintaining superior switching capabilities compared to conventional silicon counterparts.

Single FETs, MOSFETs Replacement Considerations

Officially documented direct replacements are not provided in the source material. Designers may consider other parts within the UF4C/SC 1200V Gen 4 family based on required RDS(on) values, such as variants with 23mΩ to 70mΩ options, ensuring pinout and package compatibility.

Single FETs, MOSFETs FAQ

How does the cascode configuration affect gate drive requirements?

The cascode configuration produces a normally-off device that operates with standard gate drive voltages (0 to 15 V), allowing it to replace silicon IGBTs or SiC MOSFETs without changing the gate driver circuit.

What is the maximum junction temperature rating?

The maximum junction temperature (TJ, max) is rated at 175 °C, allowing for operation in high-temperature environments typical of industrial and automotive applications.