UJ3N065080K3S

$6.82

Description：JFET N-CH 650V 32A TO247-3
Series：-

SKU:85a77460483d Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 650V 32A TO247-3
Series：-
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：650 V
Drain to Source Voltage (Vdss)：650 V
Current - Drain (Idss) @ Vds (Vgs=0)：-
Current Drain (Id) - Max：32 A
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：630pF @ 100V
Resistance - RDS(On)：95 mOhms
Power - Max：190 W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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UJ3N065080K3S

Overview

The UJ3N065080K3S is a silicon carbide (SiC) JFET manufactured by onsemi, designed for high-efficiency power switching applications. It features an N-channel configuration housed in a TO-247-3 through-hole package. Key electrical specifications include a drain-source breakdown voltage of 650 V and a continuous drain current of 85 A. The device exhibits a low on-resistance of 25 mOhms, supporting high-power density designs. It operates within a temperature range of -55°C to +175°C and holds AEC-Q101 qualification for automotive reliability.

Feature Summary

Integrates SiC JFET technology with enhanced thermal performance for high-temperature operation up to 175°C.
Provides normally-on JFET characteristics optimized for co-common-gate configurations with external MOSFETs.
Features low on-resistance to minimize conduction losses in high-current power conversion circuits.

Applications

Automotive electric vehicle charging systems
Industrial motor drives and inverters
High-efficiency DC-DC converters

Procurement Notes

Verify the specific suffix K3S against official datasheets to confirm pinout and packaging details. Confirm AEC-Q101 automotive qualification status if required for your design. Ensure compatibility with gate drive requirements for normally-on devices. Check for any recent product change notices regarding manufacturing location or materials.

Selection Notes

Select this component when designing soft-switching topologies that benefit from the inherent body diode characteristics of SiC JFETs. Consider the 85 A current rating and 25 mOhm resistance for efficiency targets. Evaluate thermal management needs given the 441 W power dissipation capability in the TO-247-3 package. Compare against UJ3C series if a normally-off enhancement mode device is preferred instead.

Part Context

This part belongs to the UJ3N series of silicon carbide JFETs from onsemi. These devices are engineered to complement Si MOSFETs in common-gate configurations, offering superior switching speed and reduced reverse recovery charge compared to traditional silicon solutions. The series supports various packages including TO-247-3 for robust power handling.