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UJ4SC075005L8SSR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is UJ4SC075005L8S. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for UJ4SC075005L8SSR
- Description：UJ4SC075005L8S
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for UJ4SC075005L8SSR
Single FETs, MOSFETs Overview
The UJ4SC075005L8SSR is a Gen 4 normally-on Silicon Carbide JFET transistor from onsemi. It features a 750 V drain-source voltage rating and an ultra-low on-resistance of 4.3 mΩ in a compact H-PDSO-F8 surface-mount package. The device supports continuous drain currents up to 120 A at a case temperature of 145 °C, with a maximum junction temperature of 175 °C. Designed for high-energy switching, it includes short-circuit withstand capability and silver-sintered die attach for superior thermal performance.
Single FETs, MOSFETs Feature Summary
- Ultra-low on-resistance in a compact H-PDSO-F8 SMD package
- High pulse current capability with robust device technology
- Silver-sintered die attach for excellent thermal resistance
- Short circuit rated for demanding protection applications
Single FETs, MOSFETs Applications
- Solid state / semiconductor circuit breakers
- Solid state / semiconductor relays
- Battery disconnects
- Surge protection
- Inrush current control
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Confirm that the component meets required environmental standards including RoHS compliance and lead-free status before integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high power density and efficient thermal management in solid-state switching environments. Ensure gate drive circuits accommodate the normally-on characteristic and negative threshold voltage requirements specified in the electrical characteristics.
Single FETs, MOSFETs Part Context
This part belongs to onsemi’s EliteSiC Gen 4 family of silicon carbide transistors. These devices are engineered to address stringent thermal and space constraints in modern power electronics, offering enhanced reliability and switching performance compared to previous generations.
Single FETs, MOSFETs Replacement Considerations
Direct replacements must match the H-PDSO-F8 package outline and electrical ratings. Verify compatibility with existing PCB footprints and ensure substitute components support the same normally-on operation mode and thermal dissipation capabilities.
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