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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.1A UMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：13pF @ 5V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：UMT6
- Grade：-
- Qualification：-
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Overview
The UM6K1NTN is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a 30V drain-source voltage rating and a continuous drain current of 0.1A. The device is optimized for 2.5V drive voltages, exhibiting a typical on-resistance of 7.0Ω at this level. Power dissipation is rated at 0.15W within an operating temperature range of -55°C to 150°C. It utilizes the UMT6 surface-mount package, equivalent to SOT-363, containing six terminals.
Feature Summary
- Dual N-channel configuration integrated into a compact surface-mount package
- Optimized for low-voltage operation with specific performance characteristics at 2.5V drive
- High thermal stability supporting extended storage and operational temperature ranges
Applications
- Low-voltage signal switching circuits
- Battery-powered portable electronic devices
- General-purpose logic level interface applications
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the ordering suffix matches the required specifications. Check RoHS compliance status against current regulatory requirements. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet. Validate packaging integrity prior to assembly to prevent damage.
Selection Notes
Select this component when a dual N-channel solution is required for low-voltage logic interfacing. Consider the 7.0Ω on-resistance at 2.5V drive when calculating power loss. Evaluate the 0.1A current limit against load requirements. Compare pinout compatibility with existing designs if substituting other dual MOSFETs.
Part Context
This part belongs to ROHM's dual MOSFET family, sharing the UMT6/SOT-363 footprint with variants like the UM6K31N. While functionally similar in packaging, electrical parameters such as breakdown voltage and on-resistance differ significantly between models. Designers must verify specific ratings rather than assuming interchangeability based solely on physical dimensions.
Replacement Considerations
The UM6K31NTN is documented as a replacement with the same pinout and package. Verify that the higher 60V rating and lower on-resistance of the substitute are compatible with the circuit design constraints.
