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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.25A UMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：250mA
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：15pF @ 25V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：UMT6
- Grade：-
- Qualification：-
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Overview
The UM6K31NTN is a dual N-channel MOSFET manufactured by ROHM Semiconductor, housed in a SOT-363 (UMT6) surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 250 mA. The device exhibits a typical on-resistance of 3 Ω at a gate-source voltage of 2.5 V, supporting low-voltage drive applications. Power dissipation is rated at 150 mW, with an operating temperature range spanning from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration utilizing micro-processing technology for low on-resistance performance.
- Optimized for 2.5 V drive voltage applications to support low-power systems.
- Compact surface-mount packaging suitable for space-constrained designs.
Applications
- Low-voltage signal switching circuits
- Battery-powered portable devices
- General-purpose logic level translation
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape specifications. Confirm RoHS compliance status and automotive qualification requirements if applicable to the target design. Cross-reference the component marking code with the package type to prevent substitution errors during assembly.
Selection Notes
Select this component when a dual N-channel solution is required with a 60 V breakdown voltage and operation under a 2.5 V gate drive. Ensure the thermal management strategy accommodates the 150 mW power dissipation limit within the specified ambient temperature range. Compare the 3 Ω on-resistance at 2.5 V against alternative packages to verify suitability for the intended current load.
Part Context
This part belongs to the UM6K31N series of dual N-channel MOSFETs from ROHM Semiconductor. The series utilizes micro-processing techniques to achieve low on-resistance in a compact form factor. The UM6K31NTN specifically denotes the version packaged in the SOT-363 format, designed for surface-mount assembly in consumer and industrial electronics.
Replacement Considerations
Direct substitutes include other ROHM dual N-channel MOSFETs in the SOT-363 package with compatible electrical ratings. Verify pinout compatibility and on-resistance characteristics before replacing. Alternative manufacturers may offer functionally equivalent parts, but parameter matching is essential for circuit integrity.
