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The UM6K34NTCN is a dual N-channel enhancement mode MOSFET manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an SOT-363-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 50 V and a continuous drain current (Id) of 200 mA. Its typical on-resistance (Rds(on)) is 2.2 Ohms, with a gate-source voltage range of -8 V to +8 V. Power dissipation is rated at 150 mW. Operating temperatures span from -55 °C to +150 °C. Electrical characteristics include a rise time of 8 ns and a fall time of 43 ns.
Verify the specific ordering suffix against official ROHM documentation to confirm pinout and electrical tolerances. Confirm RoHS compliance status through the manufacturer's certificate of conformity. Ensure the selected packaging format matches production requirements. Validate that the supplier provides traceable component history. Cross-reference the datasheet revision date with the procurement batch to ensure parameter accuracy.
Select this component when a dual N-channel configuration is required in a minimal footprint. The 50 V rating suits low-voltage systems. Verify that the 200 mA current limit meets load requirements. Consider the 2.2 Ohm on-resistance for power loss calculations. Ensure the SOT-363-6 package fits the PCB layout constraints. Check thermal management needs given the 150 mW dissipation limit.
This part belongs to the UM6K34N series of dual MOSFETs from ROHM Semiconductor. It serves as a compact solution for space-constrained designs requiring multiple N-channel switches. The series focuses on low-voltage performance and small form factors suitable for consumer electronics and portable devices.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult ROHM technical support or authorized distributors for verified alternatives matching the SOT-363-6 package and electrical specifications.