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The UM6X1NA-T8PQ2 is a dual N-channel MOSFET array manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in an SOT-563 surface-mount package. The device supports a drain-source voltage of 30V and a continuous drain current of 500mA, with a maximum power dissipation of 150mW. Key electrical characteristics include a gate-source threshold voltage of 1.5V and a gate charge of 1.28nC. The component features a fall time of 72ns and operates within a temperature range of -55°C to 150°C.
Verify the specific ordering suffix T8PQ2 against the manufacturer's official documentation to ensure correct pinout and electrical specifications. Confirm that the SOT-563 package variant matches the design footprint requirements. Cross-reference the datasheet parameters for threshold voltage and current ratings to validate suitability for the target circuit environment before finalizing procurement.
Select this component when a dual N-channel MOSFET solution is required in an ultra-small SOT-563 footprint. The 30V rating and 500mA current capacity make it suitable for low-power switching tasks. Consider the 1.5V threshold voltage for compatibility with logic-level drive signals. Ensure the 150mW power dissipation limit aligns with the thermal management strategy of the application.
This part belongs to the UM6X1NA series of MOSFET arrays from Micro Commercial Components. The series focuses on providing integrated dual-transistor solutions in small outline packages. The UM6X1NA-T8PQ2 specifically denotes the SOT-563 package variant with defined electrical characteristics for dual N-channel operation.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pin-to-pin compatibility and electrical parameter equivalence with alternative dual N-channel MOSFETs in SOT-563 packages if sourcing constraints exist.