UM7101F

$17.33

Description：RF DIODE PIN 100V 100000W
Series：-

SKU:ef24d848cf0c Category: RF Diodes Brand: Microchip Technology

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Product introduction

UM7101F is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RF DIODE PIN 100V 100000W. Review the specifications below when checking this part for your BOM.

RF Diode specifications for UM7101F

Description：RF DIODE PIN 100V 100000W
Series：-
Mfr：Microchip Technology
Package：Bulk
Diode Type：PIN - Single
Voltage - Peak Reverse (Max)：100V
Current - Max：-
Capacitance @ Vr, F：1.2pF @ 100V, 1MHz
Resistance @ If, F：600mOhm @ 100mA, 100MHz
Power Dissipation (Max)：100000 W
Operating Temperature：-65°C ~ 175°C
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

RF Diode datasheet and documents for UM7101F

UM7101F

RF Diode Overview

The UM7101F is a silicon PIN diode manufactured by Microchip Technology, designed for high-power applications. It features a hermetic MELF package configuration with a single diode arrangement. The device supports a reverse voltage of 100 V and exhibits a maximum diode capacitance of 1.2 pF. Its electrical characteristics include a maximum series resistance of 600 mOhms at maximum mid-frequency and a reverse current of 10 uA. The component operates within an ambient temperature range from -65 C to +175 C and has a carrier lifetime of 2 us.

RF Diode Feature Summary

Hermetic sealing in a MELF package for robust environmental protection
High-temperature operational capability up to +175 C
Low junction capacitance suitable for high-frequency switching

RF Diode Applications

High power RF switching circuits
Attenuator modules requiring fast recovery
Protective limiter stages in communication systems

RF Diode Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against the official datasheet before procurement. Confirm that the hermetic MELF package meets the environmental requirements of the target assembly process. Ensure compatibility with soldering profiles required for glass-axial or surface-mount hermetic components.

RF Diode Selection Notes

Select this component when high thermal stability and low capacitance are critical for signal integrity. The 100 V reverse voltage rating defines the maximum blocking capability. Consider the 600 mOhm series resistance impact on insertion loss in forward-biased states compared to lower-resistance alternatives.

RF Diode Part Context

The UM7101F belongs to the broader category of silicon PIN diodes used in microwave and RF engineering. Unlike standard rectifier diodes, its design prioritizes charge carrier lifetime management for rapid switching speeds. This specific part number denotes the hermetic variant, distinguishing it from non-hermetic plastic packaged equivalents.