UM7104E

RF Diode Overview

The UM7104E is a high-power PIN diode manufactured by Microchip Technology, designed for RF and microwave applications. It features a silicon construction with a reverse voltage rating of 400 V and a maximum diode capacitance of 1.2 pF. The device exhibits a maximum series resistance of 600 mOhms at peak intermediate frequency and a carrier lifetime of 2 µs. Operating within a temperature range of -65°C to +175°C, it maintains a low reverse current of 10 uA. This single-configuration component belongs to the UM7100 series, offering moderate power handling capabilities suitable for switch and attenuator circuits.

RF Diode Feature Summary

• Hermetic MELF package construction
• High power handling capability
• Low series resistance and capacitance

RF Diode Applications

• RF switch circuits
• Microwave attenuator circuits
• High power switching applications

RF Diode Procurement Notes

Verify the specific suffix 'E' against official datasheets to confirm exact electrical tolerances or packaging variations compared to standard models. Ensure compatibility with existing hermetic MELF footprints and thermal management requirements before integration.

RF Diode Selection Notes

Select this component when high reverse voltage (400V) and low capacitance are required in a hermetic package. Compare series resistance and carrier lifetime against alternative UM7000 or UM7200 series parts to match specific RF performance needs.

RF Diode Part Context

The UM7104E belongs to the UM7100 series of high-power PIN diodes from Microchip Technology. This series provides a balance of moderate power handling with low series resistance and capacitance, distinguishing it from the higher resistance UM7000 series and the higher capacitance UM7200 series.

RF Diode Replacement Considerations

Check for direct substitutes within the UM7100 series or compatible PIN diodes from other manufacturers that meet the 400V reverse voltage and hermetic MELF package constraints.