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The UP04878 is a dual N-channel MOSFET array in an SSMini6-F1 package. It supports 2.5 V gate drive and includes built-in gate protection diodes. Key electrical parameters at 25°C include a drain-source voltage of 50 V, continuous drain current of 100 mA, and total power dissipation of 125 mW. The gate threshold voltage ranges from 0.9 V to 1.5 V. Drain-source ON resistance is 15 Ω max at VGS = 2.5 V and 12 Ω max at VGS = 4.0 V. Input capacitance is 12 pF max at VDS = 3 V.
Verify the specific ordering suffix and packaging format required for your production line. Confirm that the component lifecycle status aligns with long-term availability needs, as this part may be subject to maintenance or discontinuation plans. Ensure compliance with RoHS directives if applicable to your manufacturing standards.
Select this component when space constraints require a dual transistor solution in a compact surface-mount package. It is suitable for applications requiring low-voltage logic level driving (2.5 V) and moderate current handling up to 100 mA. Verify that the 125 mW power dissipation rating meets the thermal requirements of the target circuit design.
This device belongs to Panasonic's composite transistor series, designed to replace two individual 2SK3539 transistors. It utilizes silicon N-channel MOSFET technology optimized for switching applications. The internal connection scheme integrates two independent channels within a single six-lead outline to maximize PCB real estate efficiency.
The datasheet identifies the equivalent discrete parts as two units of 2SK3539. No other direct substitute part numbers are documented in the provided source material.