UPA1763G-E1-AT

Description：MOSFET 2N-CH 60V 4.5A 8PSOP
Series：-

SKU:4a18f7bf9c01 Category: FET, MOSFET Arrays Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 4.5A 8PSOP
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：4.5A
Rds On (Max) @ Id, Vgs：57mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：870pF @ 10V
Power - Max：2W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.173", 4.40mm Width)
Supplier Device Package：8-PSOP
Grade：-
Qualification：-

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UPA1763G-E1-AT

Overview

The UPA1763G-E1-AT is a dual N-channel power MOSFET manufactured by Renesas Electronics Corporation, designed for automotive applications. It features an 8-SOIC surface-mount package with dimensions of 4.40mm width. The device operates at a maximum voltage of 60V and supports two independent channels. Key electrical specifications include a maximum on-resistance (RDS(ON)) of 47mΩ at 10V gate drive and a typical total gate charge (Qg) of 20nC. It is qualified for industrial use and functions within a temperature range suitable for robust electronic systems.

Feature Summary

Dual N-channel configuration for efficient power switching in compact designs
Low on-resistance characteristics to minimize conduction losses
Automotive-grade qualification ensuring reliability in demanding environments

Applications

Automotive power management circuits
Industrial motor control systems
General-purpose power switching applications

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging and tape configurations. Confirm that the component meets the necessary industrial qualification levels for your target application environment. Cross-reference the datasheet parameters against system requirements to validate performance under expected operating conditions. Ensure proper handling procedures are followed due to moisture sensitivity classifications.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required for automotive or industrial contexts. Evaluate the 60V rating and 47mΩ RDS(ON) against load requirements. Consider the 8-SOIC package constraints for PCB layout. Verify thermal dissipation capabilities given the 2W power rating. Ensure the 20nC gate charge aligns with driver circuit capabilities for optimal switching performance.

Part Context

This part belongs to Renesas' portfolio of power MOSFETs tailored for automotive and industrial sectors. It complements other discrete semiconductor solutions by providing integrated dual-channel functionality. The series emphasizes reliability and efficiency, supporting modern electronic designs that require compact, high-performance switching elements. It fits within the broader ecosystem of Renesas components aimed at enhancing system integration.

Replacement Considerations

Check for direct substitutes such as the UPA1763G-E1-A variant, noting differences in packaging or carrier type. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official cross-reference lists for approved alternatives. Ensure any replacement maintains the same automotive qualification standards and package dimensions.