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The UPA1763G-E2-A is a dual N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain current of 4.5A and supports a drain-source voltage of 60V. The device incorporates a low on-resistance of 0.066 ohms, optimizing conduction efficiency. Designed for high-performance switching applications, it utilizes a metal-oxide semiconductor field-effect transistor architecture within an 8-pin package configuration.
Verify the specific ordering suffix to ensure correct packaging and lead-free status. Confirm the moisture sensitivity level and carrier type requirements against manufacturing process specifications. Cross-reference the manufacturer part number with official Renesas documentation to validate component authenticity and technical compliance before integration into design workflows.
Select this component based on the required 60V blocking capability and 4.5A continuous current handling. Evaluate the 0.066 ohm on-resistance against thermal management constraints in the target application. Ensure the dual-channel topology aligns with circuit complexity and board space limitations compared to single-channel alternatives.
This component belongs to the UPA series of power field-effect transistors from Renesas Electronics. The series focuses on providing robust switching performance for automotive and industrial power electronics. The UPA1763 variant specifically addresses applications requiring moderate voltage ratings with high current density capabilities.
Consult official Renesas cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with generic industry alternatives without validating pinout compatibility and electrical parameter limits.